文献
J-GLOBAL ID:201002296754865627
整理番号:10A0686278
酸化インジウムガリウム亜鉛薄膜の抵抗メモリスイッチング特性に及ぼす電極材料の影響
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
著者 (8件):
CHEN Min-chen
(Dep. of Physics, National Sun Yat-Sen Univ., Kaohsiung 804, Taiwan)
,
CHANG Ting-chang
(Dep. of Physics, National Sun Yat-Sen Univ., Kaohsiung 804, Taiwan)
,
TSAI Chih-tsung
(Dep. of Physics, National Sun Yat-Sen Univ., Kaohsiung 804, Taiwan)
,
HUANG Sheng-yao
(Dep. of Physics, National Sun Yat-Sen Univ., Kaohsiung 804, Taiwan)
,
CHEN Shih-ching
(Dep. of Physics, National Sun Yat-Sen Univ., Kaohsiung 804, Taiwan)
,
HU Chih-wei
(Dep. of Electronics Engineering and Inst. of Electronics, National Chiao Tung Univ., Hsinchu 300, Taiwan)
,
SZE Simon M.
(Dep. of Electronics Engineering and Inst. of Electronics, National Chiao Tung Univ., Hsinchu 300, Taiwan)
,
TSAI Ming-jinn
(Electronics and Opto-electronics Res. Laboratories, Industrial Technol. Res. Inst., Hsinchu 300, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
96
号:
26
ページ:
262110
発行年:
2010年06月28日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)