文献
J-GLOBAL ID:201102201707083455
整理番号:11A1362956
単一金属-酸化物-金属抵抗素子のシナプス挙動
Synaptic behaviors of a single metal-oxide-metal resistive device
著者 (10件):
CHOI Sang-Jun
(Samsung Electronics Co., Semiconductor R&D Center, 445-702, Gyeonggi, KOR)
,
KIM Guk-Bae
(Korea Inst. of Sci. and Technol., Center for Neural Sci., 136-791, Seoul, KOR)
,
LEE Kyoobin
(Korea Inst. of Sci. and Technol., Center for Neural Sci., 136-791, Seoul, KOR)
,
KIM Ki-Hong
(Samsung Advanced Inst. of Sci. and Technol., AE Center, 446-712, Gyeonggi, KOR)
,
YANG Woo-Young
(Samsung Advanced Inst. of Sci. and Technol., AE Center, 446-712, Gyeonggi, KOR)
,
CHO Soohaeng
(Yonsei Univ., Dep. of Physics, 220-710, Wonju, Gangwon, KOR)
,
BAE Hyung-Jin
(Samsung Electronics Co., Semiconductor R&D Center, 445-702, Gyeonggi, KOR)
,
SEO Dong-Seok
(Samsung Electronics Co., Semiconductor R&D Center, 445-702, Gyeonggi, KOR)
,
KIM Sang-Il
(Korea Univ., Dep. of Materials Sci. and Engineering, 136-713, Seoul, KOR)
,
LEE Kyung-Jin
(Korea Univ., Dep. of Materials Sci. and Engineering, 136-713, Seoul, KOR)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
102
号:
4
ページ:
1019-1025
発行年:
2011年03月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)