文献
J-GLOBAL ID:201102224674158632
整理番号:11A1000531
プリント型トランジスタ回路におけるメモリと同調のためのしきい値電圧シフト
Threshold voltage shifting for memory and tuning in printed transistor circuits
著者 (5件):
DHAR Bal Mukund
(Dep. of Materials Sci. and Engineering, Johns Hopkins Univ., 3400 North Charles Street, Baltimore, MD 21218, USA)
,
OEZGUEN Recep
(Dep. of Electrical and Computer Engineering, Johns Hopkins Univ., 3400 North Charles Street, Baltimore, MD 21218, USA)
,
DAWIDCZYK Tom
(Dep. of Materials Sci. and Engineering, Johns Hopkins Univ., 3400 North Charles Street, Baltimore, MD 21218, USA)
,
ANDREOU Andreas
(Dep. of Electrical and Computer Engineering, Johns Hopkins Univ., 3400 North Charles Street, Baltimore, MD 21218, USA)
,
KATZ Howard E.
(Dep. of Materials Sci. and Engineering, Johns Hopkins Univ., 3400 North Charles Street, Baltimore, MD 21218, USA)
資料名:
Materials Science & Engineering. R. Reports
(Materials Science & Engineering. R. Reports)
巻:
72
号:
4
ページ:
49-80
発行年:
2011年05月22日
JST資料番号:
T0341A
ISSN:
0927-796X
資料種別:
逐次刊行物 (A)
記事区分:
文献レビュー
発行国:
オランダ (NLD)
言語:
英語 (EN)