文献
J-GLOBAL ID:201102225833458827
整理番号:11A1481334
陽電子消滅分光法によって陽子を照射された多孔質シリコンおよびシリコン基板におけるナノ物質を研究する可能性
Possibilities of studying nanoobjects in porous silicon and silicon substrates irradiated with protons by positron annihilation spectroscopy
著者 (8件):
BURCL R.
(Inst. for Energy, European Commission, Joint Res. Centre, Westerduinweg 3, P.O. Box 2, NL-1755 LE, Petten, NLD)
,
GRAFUTIN V. I.
(Russian Federation State Scientific Center-Alikhanov Inst. for Theoretical and Experimental Physics, ul. Bol’shaya ...)
,
ILYUKHINA O. V.
(Russian Federation State Scientific Center-Alikhanov Inst. for Theoretical and Experimental Physics, ul. Bol’shaya ...)
,
MYASISHCHEVA G. G.
(Russian Federation State Scientific Center-Alikhanov Inst. for Theoretical and Experimental Physics, ul. Bol’shaya ...)
,
PROKOP’EV E. P.
(Russian Federation State Scientific Center-Alikhanov Inst. for Theoretical and Experimental Physics, ul. Bol’shaya ...)
,
PROKOP’EV E. P.
(Moscow Inst. of Electronic Technol. (Technical University), ul. Yunosti 11, Zelenograd, 124498, Moscow, RUS)
,
TIMOSHENKOV S. P.
(Moscow Inst. of Electronic Technol. (Technical University), ul. Yunosti 11, Zelenograd, 124498, Moscow, RUS)
,
FUNTIKOV Yu. V.
(Russian Federation State Scientific Center-Alikhanov Inst. for Theoretical and Experimental Physics, ul. Bol’shaya ...)
資料名:
Physics of the Solid State
(Physics of the Solid State)
巻:
52
号:
4
ページ:
700-705
発行年:
2010年04月
JST資料番号:
W0823A
ISSN:
1063-7834
CODEN:
PSOSED
資料種別:
逐次刊行物 (A)
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)