文献
J-GLOBAL ID:201102238388745254
整理番号:11A1498877
光起電InAs量子ドットを埋め込んだGaAs太陽電池におけるビルトイン電場の影響
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
著者 (8件):
SHANG X. J.
(Chinese Acad. of Sciences, State Key Lab. for Superlattices and Microstructures, Inst. of Semiconductors, P.O. Box ...)
,
SHANG X. J.
(Royal Inst. of Technol., Dep. of Theoretical Chemistry, School of Biotechnology, 106 91, Stockholm, SWE)
,
HE J. F.
(Chinese Acad. of Sciences, State Key Lab. for Superlattices and Microstructures, Inst. of Semiconductors, P.O. Box ...)
,
WANG H. L.
(Chinese Acad. of Sciences, State Key Lab. for Superlattices and Microstructures, Inst. of Semiconductors, P.O. Box ...)
,
LI M. F.
(Chinese Acad. of Sciences, State Key Lab. for Superlattices and Microstructures, Inst. of Semiconductors, P.O. Box ...)
,
ZHU Y.
(Chinese Acad. of Sciences, State Key Lab. for Superlattices and Microstructures, Inst. of Semiconductors, P.O. Box ...)
,
NIU Z. C.
(Chinese Acad. of Sciences, State Key Lab. for Superlattices and Microstructures, Inst. of Semiconductors, P.O. Box ...)
,
FU Y.
(Royal Inst. of Technol., Dep. of Theoretical Chemistry, School of Biotechnology, 106 91, Stockholm, SWE)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
103
号:
2
ページ:
335-341
発行年:
2011年05月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)