文献
J-GLOBAL ID:201102282130658399
整理番号:11A0857484
窒素ドープ-ZnO/n-GaNヘテロ接合
Nitrogen doped-ZnO/n-GaN heterojunctions
著者 (10件):
CHEN Xin Yi
(Dep. of Physics, The Univ. of Hong Kong, Pokfulam Road, Hong Kong)
,
FANG Fang
(Dep. of Physics, The Univ. of Hong Kong, Pokfulam Road, Hong Kong)
,
NG Alan M. C.
(Dep. of Physics, The Univ. of Hong Kong, Pokfulam Road, Hong Kong)
,
DJURISIC Aleksandra B.
(Dep. of Physics, The Univ. of Hong Kong, Pokfulam Road, Hong Kong)
,
CHEAH Kok Wai
(Dep. of Physics, Hong Kong Baptist Univ., Kowloon Tong, Hong Kong)
,
LING Chi Chung
(Dep. of Physics, The Univ. of Hong Kong, Pokfulam Road, Hong Kong)
,
CHAN Wai Kin
(Dep. of Chemistry, The Univ. of Hong Kong, Pokfulam Road, Hong Kong)
,
FONG Patrick W. K.
(Dep. of Electronic and Information Engineering, Hong Kong Polytechnic Univ., Hung Hom, Hong Kong)
,
LUI Hsian Fei
(Dep. of Electronic and Information Engineering, Hong Kong Polytechnic Univ., Hung Hom, Hong Kong)
,
SURYA Charles
(Dep. of Electronic and Information Engineering, Hong Kong Polytechnic Univ., Hung Hom, Hong Kong)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
109
号:
8
ページ:
084330
発行年:
2011年04月15日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)