文献
J-GLOBAL ID:201102284675136538
整理番号:11A0962216
シリコンナノワイヤ電界効果トランジスタの電気特性に与える矩形状チャネル断面の構造的利点
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors
著者 (7件):
SATO Soshi
(Frontier Res. Center, Tokyo Inst. of Technol., 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, JPN)
,
KAKUSHIMA Kuniyuki
(Interdisciplinary Graduate School of Sci. and Engineering, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, JPN)
,
AHMET Parhat
(Frontier Res. Center, Tokyo Inst. of Technol., 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, JPN)
,
OHMORI Kenji
(Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, JPN)
,
NATORI Kenji
(Frontier Res. Center, Tokyo Inst. of Technol., 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, JPN)
,
YAMADA Keisaku
(Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, JPN)
,
IWAI Hiroshi
(Frontier Res. Center, Tokyo Inst. of Technol., 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, JPN)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
51
号:
5
ページ:
879-884
発行年:
2011年05月
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)