文献
J-GLOBAL ID:201102298099775105
整理番号:11A1161453
TSV主導積層化による4x128 I/Os付き1.2V 12.8GB/s 2Gbのモバイル広帯域I/O DRAM
A 1.2V 12.8GB/s 2Gb Mobile Wide-I/O DRAM with 4×128 I/Os Using TSV-Based Stacking
著者 (23件):
KIM Jung-Sik
(Samsung Electronics, Hwasung, KOR)
,
OH Chi Sung
(Samsung Electronics, Hwasung, KOR)
,
LEE Hocheol
(Samsung Electronics, Hwasung, KOR)
,
LEE Donghyuk
(Samsung Electronics, Hwasung, KOR)
,
HWANG Hyong-Ryol
(Samsung Electronics, Hwasung, KOR)
,
HWANG Sooman
(Samsung Electronics, Hwasung, KOR)
,
NA Byongwook
(Samsung Electronics, Hwasung, KOR)
,
MOON Joungwook
(Samsung Electronics, Hwasung, KOR)
,
KIM Jin-Guk
(Samsung Electronics, Hwasung, KOR)
,
PARK Hanna
(Samsung Electronics, Hwasung, KOR)
,
RYU Jang-Woo
(Samsung Electronics, Hwasung, KOR)
,
PARK Kiwon
(Samsung Electronics, Hwasung, KOR)
,
KANG Sang-Kyu
(Samsung Electronics, Hwasung, KOR)
,
KIM So-Young
(Samsung Electronics, Hwasung, KOR)
,
KIM Hoyoung
(Samsung Electronics, Hwasung, KOR)
,
BANG Jong-Min
(Samsung Electronics, Hwasung, KOR)
,
CHO Hyunyoon
(Samsung Electronics, Hwasung, KOR)
,
JANG Minsoo
(Samsung Electronics, Hwasung, KOR)
,
HAN Cheolmin
(Samsung Electronics, Hwasung, KOR)
,
LEE Jung-Bae
(Samsung Electronics, Hwasung, KOR)
,
KYUNG Kyehyun
(Samsung Electronics, Hwasung, KOR)
,
CHOI Joo-Sun
(Samsung Electronics, Hwasung, KOR)
,
JUN Young-Hyun
(Samsung Electronics, Hwasung, KOR)
資料名:
Digest of Technical Papers. IEEE International Solid-State Circuits Conference
(Digest of Technical Papers. IEEE International Solid-State Circuits Conference)
巻:
2011
ページ:
496-497,497A
発行年:
2011年
JST資料番号:
D0753A
ISSN:
0193-6530
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)