文献
J-GLOBAL ID:201202204983937600
整理番号:12A1603094
Cu/ZrO2/Pt抵抗スイッチング素子の性能に及ぼす低接触電流応力処理の影響
Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device
著者 (11件):
XIE Hongwei
(Lanzhou Univ., Lanzhou, CHN)
,
XIE Hongwei
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
LIU Qi
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
LI Yingtao
(Lanzhou Univ., Lanzhou, CHN)
,
LI Yingtao
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
LV Hangbing
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
WANG Ming
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
ZHANG Kangwei
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
LONG Shibing
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
,
LIU Su
(Lanzhou Univ., Lanzhou, CHN)
,
LIU Ming
(Inst. of Microelectronics, Chinese Acad. of Sci., Beijing, CHN)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
27
号:
10
ページ:
105007,1-5
発行年:
2012年10月
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)