文献
J-GLOBAL ID:201202206651669744
整理番号:12A1547934
高密度メモリ用途の遷移金属酸化物に基づいた4F2セレクタレスクロスバーアレイ2Mb ReRAMの集積
Integration of 4F2 Selector-less Crossbar Array 2Mb ReRAM Based on Transition Metal Oxides for High Density Memory Applications
著者 (35件):
LEE Hyung Dong
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
KIM S. G.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
CHO K.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
HWANG H
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
CHOI H.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
LEE J.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
LEE S. H.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
LEE H. J.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
SUH J.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
CHUNG S.-O.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
KIM Y. S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
KIM K. S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
NAM W. S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
CHEONG J. T.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
KIM J. T.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
CHAE S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
HWANG E.-R.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
PARK S. N.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
SOHN Y. S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
LEE C. G.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
SHIN H. S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
LEE K. J.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
HONG K.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
JEONG H. G.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
RHO K. M.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
KIM Y. K.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
CHUNG S.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
NICKEL J.
(Hewlett-Packard Lab., CA, USA)
,
YANG J. J.
(Hewlett-Packard Lab., CA, USA)
,
CHO H. S.
(Hewlett-Packard Lab., CA, USA)
,
PERNER F.
(Hewlett-Packard Lab., CA, USA)
,
WILLIAMS R. S.
(Hewlett-Packard Lab., CA, USA)
,
LEE J. H.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
PARK S. K.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
,
HONG S.-J.
(Hynix Semiconductor Inc. Kyoungki-do, KOR)
資料名:
Digest of Technical Papers. Symposium on VLSI Technology
(Digest of Technical Papers. Symposium on VLSI Technology)
巻:
2012
ページ:
151-152
発行年:
2012年
JST資料番号:
A0035B
ISSN:
0743-1562
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)