文献
J-GLOBAL ID:201202207851553143
整理番号:12A1080990
複数の二重ヘテロ構造活性領域を持つInGaN発光ダイオードの量子効率の改善
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
著者 (8件):
LI X.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
OKUR S.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
ZHANG F.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
HAFIZ S. A.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
AVRUTIN V.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
OEZGUER Ue.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
MORKOC H.
(Dep. of Electrical and Computer Engineering, Virginia Commonwealth Univ., Richmond, Virginia 23284, USA)
,
JARASIUNAS K.
(Semiconductor Optoelectronics Dep., Inst. of Applied Res., Vilnius Univ., Vilnius, LTU)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
4
ページ:
041115-041115-4
発行年:
2012年07月23日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)