文献
J-GLOBAL ID:201202208159711673
整理番号:12A1311575
APCVDによるSi(100)基板上への3C-SiC薄膜の成長に及ぼすプロパン/シラン比の効果
Effect of propane/silane ratio on the growth of 3C-SiC thin films on Si(100) substrates by APCVD
著者 (7件):
SHI Biao
(Shanghai Inst. of Ceramics, Chinese Acad. of Sciences, Shanghai 201800, CHN)
,
SHI Biao
(Graduate School of the Chinese Acad. of Sciences, Beijing 100049, CHN)
,
LIU Xue-chao
(Shanghai Inst. of Ceramics, Chinese Acad. of Sciences, Shanghai 201800, CHN)
,
ZHU Ming-xing
(Shanghai Inst. of Ceramics, Chinese Acad. of Sciences, Shanghai 201800, CHN)
,
ZHU Ming-xing
(Graduate School of the Chinese Acad. of Sciences, Beijing 100049, CHN)
,
YANG Jian-hua
(Shanghai Inst. of Ceramics, Chinese Acad. of Sciences, Shanghai 201800, CHN)
,
SHI Er-wei
(Shanghai Inst. of Ceramics, Chinese Acad. of Sciences, Shanghai 201800, CHN)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
259
ページ:
685-690
発行年:
2012年10月15日
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)