文献
J-GLOBAL ID:201202208254239841
整理番号:12A0612045
改良MOCVD法により蒸着されたBi2Te3膜の成長と熱電特性
Growth and thermoelectric properties of Bi2Te3 films deposited by modified MOCVD
著者 (8件):
YOU Hyunwoo
(Dep. of Materials Sci. and Engineering, Seoul National Univ., Seoul 151-744, KOR)
,
YOU Hyunwoo
(Electronic Materials Center, Korea Inst. of Sci. and Technol. (KIST), Seoul 136-791, KOR)
,
HYUB BAEK Seung
(Electronic Materials Center, Korea Inst. of Sci. and Technol. (KIST), Seoul 136-791, KOR)
,
KIM Kwang-chon
(School of Electrical and Engineering, Yonsei Univ., Seoul 120-749, KOR)
,
KWON O-jong
(Dep. of Materials Sci. and Engineering, Seoul National Univ., Seoul 151-744, KOR)
,
KIM Jin-sang
(Electronic Materials Center, Korea Inst. of Sci. and Technol. (KIST), Seoul 136-791, KOR)
,
PARK Chan
(Dep. of Materials Sci. and Engineering, Seoul National Univ., Seoul 151-744, KOR)
,
PARK Chan
(Res. Inst. of Advanced Materials (RIAM), Seoul National Univ., Seoul 151-744, KOR)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
346
号:
1
ページ:
17-21
発行年:
2012年05月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)