文献
J-GLOBAL ID:201202210786596590
整理番号:12A0269332
GaNベース緑色発光ダイオードの発光特性に及ぼす傾斜電子阻止層の効果
Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes
著者 (9件):
ZHANG Ning
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
LIU Zhe
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
WEI Tongbo
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
ZHANG Lian
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
WEI Xuecheng
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
WANG Xiaodong
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
LU Hongxi
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
LI Jinmin
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
,
WANG Junxi
(Res. and Dev. Center for Semiconductor Lighting, Chinese Acad. of Sciences, P.O. Box 912, Beijing 100083, People’s ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
5
ページ:
053504
発行年:
2012年01月30日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)