文献
J-GLOBAL ID:201202211395593968
整理番号:12A0121638
SF6系プラズマ中の低温プラズマ増強原子層蒸着により成長させた窒化アルミニウムマスク層のプラズマエッチ特性
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
著者 (7件):
PERROS Alexander
(Dep. of Micro- and Nanosciences, Aalto Univ. School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, FIN)
,
BOSUND Markus
(Dep. of Micro- and Nanosciences, Aalto Univ. School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, FIN)
,
SAJAVAARA Timo
(Dep. of Physics, Univ. of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae, FIN)
,
LAITINEN Mikko
(Dep. of Physics, Univ. of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae, FIN)
,
SAINIEMI Lauri
(Dep. of Micro and Nanosciences, School of Electrical Engineering, Aalto Univ., P.O. Box 13500, FI-00076, Aalto, FIN)
,
HUHTIO Teppo
(Dep. of Micro and Nanosciences, School of Electrical Engineering, Aalto Univ., P.O. Box 13500, FI-00076, Aalto, FIN)
,
LIPSANEN Harri
(Dep. of Micro and Nanosciences, School of Electrical Engineering, Aalto Univ., P.O. Box 13500, FI-00076, Aalto, FIN)
資料名:
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films
(Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films)
巻:
30
号:
1
ページ:
011504
発行年:
2012年01月
JST資料番号:
C0789B
ISSN:
0734-2101
CODEN:
JVTAD6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)