文献
J-GLOBAL ID:201202211695758110
整理番号:12A0256692
単一エネルギーの陽電子ビームにより調べたSiドープAlGaN中の固有カチオン空孔
Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams
著者 (9件):
UEDONO A.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
TENJINBAYASHI K.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
TSUTSUI T.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
SHIMAHARA Y.
(Dep. of Electrical and Electronic Engineering, Mie Univ., Tsu 514-8507, JPN)
,
MIYAKE H.
(Dep. of Electrical and Electronic Engineering, Mie Univ., Tsu 514-8507, JPN)
,
HIRAMATSU K.
(Dep. of Electrical and Electronic Engineering, Mie Univ., Tsu 514-8507, JPN)
,
OSHIMA N.
(Res. Inst. of Instrumentation Frontier, National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba ...)
,
SUZUKI R.
(Res. Inst. of Instrumentation Frontier, National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba ...)
,
ISHIBASHI S.
(Nanosystem Res. Inst. (NRI) “RICS”, National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
111
号:
1
ページ:
013512
発行年:
2012年01月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)