文献
J-GLOBAL ID:201202211939389111
整理番号:12A0723326
ゲートバイアスストレス下にあるInGaZnO薄膜トランジスタにおける熱誘起正孔トラッピング現象を含む温度不安定性のN2Oプラズマ処理による抑制
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
著者 (9件):
CHANG Geng-wei
(Dep. of Photonics & Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Hsin-Chu, 300, Taiwan)
,
CHANG Ting-chang
(Dep. of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen Univ., 70 Lien-hai Road, Kaohsiung ...)
,
JHU Jhe-ciou
(Dep. of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen Univ., 70 Lien-hai Road, Kaohsiung ...)
,
TSAI Tsung-ming
(Inst. of Materials Sci. and Engineering, National Sun Yat-Sen Univ., Kaohsiung, 70 Lien-hai Road, Kaohsiung, 804, Taiwan)
,
SYU Yong-en
(Dep. of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen Univ., 70 Lien-hai Road, Kaohsiung ...)
,
CHANG Kuan-chang
(Inst. of Materials Sci. and Engineering, National Sun Yat-Sen Univ., Kaohsiung, 70 Lien-hai Road, Kaohsiung, 804, Taiwan)
,
TAI Ya-hsiang
(Dep. of Photonics & Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Hsin-Chu, 300, Taiwan)
,
JIAN Fu-yen
(Dep. of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen Univ., 70 Lien-hai Road, Kaohsiung ...)
,
HUNG Ya-chi
(Inst. of Materials Sci. and Engineering, National Sun Yat-Sen Univ., Kaohsiung, 70 Lien-hai Road, Kaohsiung, 804, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
18
ページ:
182103-182103-3
発行年:
2012年04月30日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)