文献
J-GLOBAL ID:201202212667459014
整理番号:12A1763461
高k誘電体を用いる高性能有機トランジスタ:2,9-ジデシル-ジナフト[2,3-b:2′,3′-f]チエノ[3,2-b]チオフェンの溶液処理単結晶と真空蒸着多結晶膜について比較研究
High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene
著者 (12件):
OU-YANG W.
(The Inst. of Scientific and Industrial Res. (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JPN)
,
UEMURA T.
(The Inst. of Scientific and Industrial Res. (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JPN)
,
MIYAKE K.
(The Inst. of Scientific and Industrial Res. (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JPN)
,
ONISH S.
(Res. Laboratories, DENSO CORPORATION, 500-1 Minamiyama Komenoki-cho, Nisshin, Aichi 470-0111, JPN)
,
KATO T.
(Res. Laboratories, DENSO CORPORATION, 500-1 Minamiyama Komenoki-cho, Nisshin, Aichi 470-0111, JPN)
,
KATAYAMA M.
(Res. Laboratories, DENSO CORPORATION, 500-1 Minamiyama Komenoki-cho, Nisshin, Aichi 470-0111, JPN)
,
KANG M.
(Dep. of Applied Chemistry, Graduate School of Engineering, Hiroshima Univ., 1-4-1 Kagamiyama, Hiroshima 739-8527, JPN)
,
TAKIMIYA K.
(Dep. of Applied Chemistry, Graduate School of Engineering, Hiroshima Univ., 1-4-1 Kagamiyama, Hiroshima 739-8527, JPN)
,
IKEDA M.
(R&D Planning Div., Res. & Dev. Group, Nippon Kayaku Co. Ltd., Kita-ku, Tokyo 115-8588, JPN)
,
KUWABARA H.
(R&D Planning Div., Res. & Dev. Group, Nippon Kayaku Co. Ltd., Kita-ku, Tokyo 115-8588, JPN)
,
HAMADA M.
(R&D Planning Div., Res. & Dev. Group, Nippon Kayaku Co. Ltd., Kita-ku, Tokyo 115-8588, JPN)
,
TAKEYA J.
(The Inst. of Scientific and Industrial Res. (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JPN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
22
ページ:
223304-223304-5
発行年:
2012年11月26日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)