文献
J-GLOBAL ID:201202219606129121
整理番号:12A1220966
クラウン形パターン化サファイア基板を用いたGaNによる発光ダイオードの光抽出強化
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
著者 (16件):
CHIU Ching-Hsueh
(National Chiao Tung Univ., Hsinchu, TWN)
,
HSU Lung-Hsing
(National Chiao-Tung Univ., Tainan City, TWN)
,
LEE Chia-Yu
(National Chiao Tung Univ., Hsinchu, TWN)
,
LIN Chien-Chung
(National Chiao-Tung Univ., Tainan City, TWN)
,
LIN Bo-Wen
(Sino-American Silicon Products Inc., Hsinchu, TWN)
,
TU Shang-Ju
(National Cheng Kung Univ., Tainan City, TWN)
,
CHEN Yan-Hao
(National Chiao Tung Univ., Hsinchu, TWN)
,
LIU Che-Yu
(National Chiao Tung Univ., Hsinchu, TWN)
,
HSU Wen-Ching
(Sino-American Silicon Products Inc., Hsinchu, TWN)
,
LAN Yu-Pin
(National Chiao Tung Univ., Hsinchu, TWN)
,
SHEU Jinn-Kong
(National Cheng Kung Univ., Tainan City, TWN)
,
LU Tien-Chang
(National Chiao Tung Univ., Hsinchu, TWN)
,
CHI Gou-Chung
(National Chiao Tung Univ., Hsinchu, TWN)
,
KUO Hao-Chung
(National Chiao Tung Univ., Hsinchu, TWN)
,
WANG Shing-Chung
(National Chiao Tung Univ., Hsinchu, TWN)
,
CHANG Chun-Yen
(National Chiao Tung Univ., Hsinchu, TWN)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
24
号:
13-16
ページ:
1212-1214
発行年:
2012年07月01日
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)