文献
J-GLOBAL ID:201202220636657716
整理番号:12A1352254
3D NANDフラッシュメモリ用の垂直チャネル積層アレイ(VCSTAR)
Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory
著者 (5件):
PARK Se Hwan
(Inter-University Semiconductor Res. Center (ISRC) and School of Electrical Engineering and Computer Sci., Seoul ...)
,
KIM Yoon
(Inter-University Semiconductor Res. Center (ISRC) and School of Electrical Engineering and Computer Sci., Seoul ...)
,
KIM Wandong
(Inter-University Semiconductor Res. Center (ISRC) and School of Electrical Engineering and Computer Sci., Seoul ...)
,
SEO Joo Yun
(Inter-University Semiconductor Res. Center (ISRC) and School of Electrical Engineering and Computer Sci., Seoul ...)
,
PARK Byung-gook
(Inter-University Semiconductor Res. Center (ISRC) and School of Electrical Engineering and Computer Sci., Seoul ...)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
78
ページ:
34-38
発行年:
2012年12月
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)