文献
J-GLOBAL ID:201202223003601230
整理番号:12A1245848
酸化インジウム亜鉛を基本とするトランジスターにおける負バイアス印加ストレスによって誘起される不安定性の異常な振る舞い:陽イオンコンビナトリアル法
Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach
著者 (9件):
OH Seungha
(Dep. of Materials Sci. and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Res. Center ...)
,
SEOB YANG Bong
(Dep. of Materials Sci. and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Res. Center ...)
,
JANG KIM Yoon
(Dep. of Materials Sci. and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Res. Center ...)
,
SOOK OH Myeong
(Dep. of Materials Sci. and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Res. Center ...)
,
JANG Mi
(Dep. of Advanced Fiber Engineering and Optoelectronic Hybrid Center, Inha Univ., Incheon 402-751, KOR)
,
YANG Hoichang
(Dep. of Advanced Fiber Engineering and Optoelectronic Hybrid Center, Inha Univ., Incheon 402-751, KOR)
,
KYEONG JEONG Jae
(Dep. of Materials Sci. and Engineering and Optoelectronic Hybrid Center, Inha Univ., Incheon 402-751, KOR)
,
SEONG HWANG Cheol
(Dep. of Materials Sci. and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Res. Center ...)
,
JOON KIM Hyeong
(Dep. of Materials Sci. and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Res. Center ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
9
ページ:
092107-092107-5
発行年:
2012年08月27日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)