文献
J-GLOBAL ID:201202223673288380
整理番号:12A0834542
Si(100)上の酸化セリウム薄膜の原子価数遷移とケイ酸塩形成
Valence number transition and silicate formation of cerium oxide films on Si(100)
著者 (12件):
MAMATRISHAT M.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
KOUDA M.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
KAKUSHIMA K.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku ...)
,
NOHIRA H.
(TokyoCity Univ., 1-28-1 Tamazutsumi Setagaya-ku, Tokyo 158-8857, JPN)
,
AHMET P.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
KATAOKA Y.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku ...)
,
NISHIYAMA A.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku ...)
,
TSUTSUI K.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku ...)
,
SUGII N.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku ...)
,
NATORI K.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
HATTORI T.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
IWAI H.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
資料名:
Vacuum
(Vacuum)
巻:
86
号:
10
ページ:
1513-1516
発行年:
2012年04月27日
JST資料番号:
E0347A
ISSN:
0042-207X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)