文献
J-GLOBAL ID:201202224291448154
整理番号:12A1154451
TaN-Al2O3-InP金属-酸化物-半導体電界効果トランジスタの電気的特性に及ぼすSF6プラズマ処理の効果
Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor
著者 (5件):
WANG Yanzhen
(Microelectronics Res. Center, Dep. of Electrical and Computer Engineering, The Univ. of Texas at Austin, Austin ...)
,
CHEN Yen-ting
(Microelectronics Res. Center, Dep. of Electrical and Computer Engineering, The Univ. of Texas at Austin, Austin ...)
,
XUE Fei
(Microelectronics Res. Center, Dep. of Electrical and Computer Engineering, The Univ. of Texas at Austin, Austin ...)
,
ZHOU Fei
(Microelectronics Res. Center, Dep. of Electrical and Computer Engineering, The Univ. of Texas at Austin, Austin ...)
,
LEE Jack C.
(Microelectronics Res. Center, Dep. of Electrical and Computer Engineering, The Univ. of Texas at Austin, Austin ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
6
ページ:
063505-063505-4
発行年:
2012年08月06日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)