文献
J-GLOBAL ID:201202227757505659
整理番号:12A0385843
テラヘルツ領域でのInxGa1-xN薄膜の特性
Properties of InxGa1-xN films in terahertz range
著者 (8件):
GAUTHIER-BRUN A.
(Inst. of Materials Res. and Engineering (IMRE), Agency for Sci., Technol. and Res. (A*STAR), 3 Res. link, Singapore ...)
,
TENG J. H.
(Inst. of Materials Res. and Engineering (IMRE), Agency for Sci., Technol. and Res. (A*STAR), 3 Res. link, Singapore ...)
,
DOGHECHE E.
(Inst. of Electronics, Microelectronics and Nanotechnology, UMR-CNRS 8520, Avenue Poincare, 59652 Villeneuve d’Ascq ...)
,
LIU W.
(Inst. of Materials Res. and Engineering (IMRE), Agency for Sci., Technol. and Res. (A*STAR), 3 Res. link, Singapore ...)
,
GOKARNA A.
(Inst. of Electronics, Microelectronics and Nanotechnology, UMR-CNRS 8520, Avenue Poincare, 59652 Villeneuve d’Ascq ...)
,
TONOUCHI M.
(Inst. of Laser Engineering, Osaka Univ., 2-6 Yamada-Oka, Suita-City, Osaka 565-0871, JPN)
,
CHUA S. J.
(Inst. of Materials Res. and Engineering (IMRE), Agency for Sci., Technol. and Res. (A*STAR), 3 Res. link, Singapore ...)
,
DECOSTER D.
(Inst. of Electronics, Microelectronics and Nanotechnology, UMR-CNRS 8520, Avenue Poincare, 59652 Villeneuve d’Ascq ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
7
ページ:
071913
発行年:
2012年02月13日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)