文献
J-GLOBAL ID:201202231437586291
整理番号:12A1711873
指向性自己集合を用いた半導体及び誘電体材料のサブ30nmピッチライン-スペースパターニング
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
著者 (12件):
TSAI Hsin-yu
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
MIYAZOE Hiroyuki
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
ENGELMANN Sebastian
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
TO Bang
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
SIKORSKI Ed
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
BUCCHIGNANO Jim
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
KLAUS Dave
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
LIU Chi-chun
(IBM Almaden Res. Center, 650 Harry Road, San Jose, California 95120 and IBM Albany Nanotech, 257 Fuller Road, Suite ...)
,
CHENG Joy
(IBM Almaden Res. Center, 650 Harry Road, San Jose, California 95120)
,
SANDERS Dan
(IBM Almaden Res. Center, 650 Harry Road, San Jose, California 95120)
,
FULLER Nicholas
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
,
GUILLORN Michael
(IBM Watson Res. Center, 1101 Kitchawan Road, Yorktown, New York 10598)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
30
号:
6
ページ:
06F205-06F205-6
発行年:
2012年11月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)