文献
J-GLOBAL ID:201202234671955321
整理番号:12A1604323
電子照射したGaN中に形成された欠陥からの発光特性に及ぼす焼なまし効果
Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN
著者 (5件):
LIANG L.m.
(School of Materials Sci. and Engineering, Hebei Univ. of Technol., No.129 Guangrong Road, Hongqiao, Tianjin 300130, CHN)
,
XIE X.j.
(School of Materials Sci. and Engineering, Hebei Univ. of Technol., No.129 Guangrong Road, Hongqiao, Tianjin 300130, CHN)
,
HAO Q.y.
(School of Materials Sci. and Engineering, Hebei Univ. of Technol., No.129 Guangrong Road, Hongqiao, Tianjin 300130, CHN)
,
TIAN Y.
(School of Materials Sci. and Engineering, Hebei Univ. of Technol., No.129 Guangrong Road, Hongqiao, Tianjin 300130, CHN)
,
LIU C.c.
(School of Materials Sci. and Engineering, Hebei Univ. of Technol., No.129 Guangrong Road, Hongqiao, Tianjin 300130, CHN)
資料名:
Radiation Measurements
(Radiation Measurements)
巻:
47
号:
10
ページ:
965-969
発行年:
2012年10月
JST資料番号:
H0649A
ISSN:
1350-4487
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)