文献
J-GLOBAL ID:201202235011150599
整理番号:12A0956221
異なる焼きなまし温度によるZnOベースのReRAMsの抵抗スイッチング特性
Resistive switching characteristics of ZnO based ReRAMs with different annealing temperatures
著者 (8件):
LI Hongxia
(Lab of Electronic Materials and Devices, Hangzhou Dianzi Univ., Hangzhou 310018, CHN)
,
NIU Ben
(Lab of Electronic Materials and Devices, Hangzhou Dianzi Univ., Hangzhou 310018, CHN)
,
MAO Qinan
(Lab of Electronic Materials and Devices, Hangzhou Dianzi Univ., Hangzhou 310018, CHN)
,
XI Junhua
(Lab of Electronic Materials and Devices, Hangzhou Dianzi Univ., Hangzhou 310018, CHN)
,
XI Junhua
(State Key Lab of Silicon Materials, Zhejiang Univ., Hangzhou 310027, CHN)
,
KE Weiqing
(Lab of Electronic Materials and Devices, Hangzhou Dianzi Univ., Hangzhou 310018, CHN)
,
JI Zhenguo
(Lab of Electronic Materials and Devices, Hangzhou Dianzi Univ., Hangzhou 310018, CHN)
,
JI Zhenguo
(State Key Lab of Silicon Materials, Zhejiang Univ., Hangzhou 310027, CHN)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
75
ページ:
28-32
発行年:
2012年09月
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)