文献
J-GLOBAL ID:201202238448849787
整理番号:12A0652678
埋め込まれた2次元電荷を利用する高度に調節可能なヘテロ構造金属-半導体-金属キャパシタ
A highly tunable heterostructure metal-semiconductor-metal capacitor utilizing embedded 2-dimensional charge
著者 (7件):
DIANAT P.
(Electrical and Computer Engineering Dep., Drexel Univ., Philadelphia, Pennsylvania 19104, USA)
,
PRUSAK R. W.
(Electrical and Computer Engineering Dep., Drexel Univ., Philadelphia, Pennsylvania 19104, USA)
,
GALLO E.
(Electrical and Computer Engineering Dep., Drexel Univ., Philadelphia, Pennsylvania 19104, USA)
,
COLA A.
(Inst. for Microelectronics and Microsystems-Unit of Lecce, National Council of Res. (IMM-CNR), Via Monteroni, Lecce ...)
,
PERSANO A.
(Inst. for Microelectronics and Microsystems-Unit of Lecce, National Council of Res. (IMM-CNR), Via Monteroni, Lecce ...)
,
QUARANTA F.
(Inst. for Microelectronics and Microsystems-Unit of Lecce, National Council of Res. (IMM-CNR), Via Monteroni, Lecce ...)
,
NABET B.
(Electrical and Computer Engineering Dep., Drexel Univ., Philadelphia, Pennsylvania 19104, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
15
ページ:
153505-153505-3
発行年:
2012年04月09日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)