文献
J-GLOBAL ID:201202240851547051
整理番号:12A0480391
Ru(0001)上のセンチメータ規模のエピタキシャル成長単層グラフェンの珪素層インターカレーション
Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
著者 (16件):
MAO Jinhai
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
HUANG Li
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
PAN Yi
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
GAO Min
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
HE Junfeng
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
ZHOU Haitao
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
GUO Haiming
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
TIAN Yuan
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
ZOU Qiang
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
ZHANG Lizhi
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
ZHANG Haigang
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
WANG Yeliang
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
DU Shixuan
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
ZHOU Xingjiang
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
,
CASTRO NETO A. H.
(Graphene Res. Centre, Dep. of Physics, National Univ. of Singapore, Singapore 117542)
,
GAO Hong-jun
(Inst. of Physics, Chinese Acad. of Sciences, Beijing 100190, CHN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
9
ページ:
093101
発行年:
2012年02月27日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)