文献
J-GLOBAL ID:201202240903352483
整理番号:12A1719055
金属誘導側部結晶化により強化された多結晶シリコンナノワイヤ薄膜トランジスタの特性化
Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
著者 (6件):
SU Chun-jung
(Nano Facility Center, National Chiao Tung Univ., 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan)
,
SU Chun-jung
(Dep. of Electronics Engineering and Inst. of Electronics, National Chiao Tung Univ., 1001 Ta-Hsueh Rd., I, Hsinchu ...)
,
HUANG Yu-feng
(Dep. of Electronics Engineering and Inst. of Electronics, National Chiao Tung Univ., 1001 Ta-Hsueh Rd., I, Hsinchu ...)
,
LIN Horng-chih
(Dep. of Electronics Engineering and Inst. of Electronics, National Chiao Tung Univ., 1001 Ta-Hsueh Rd., I, Hsinchu ...)
,
LIN Horng-chih
(National Nano Device Laboratories, 26 prosperity Rd. I, Hsinchu 300, Taiwan)
,
HUANG Tiao-yuan
(Dep. of Electronics Engineering and Inst. of Electronics, National Chiao Tung Univ., 1001 Ta-Hsueh Rd., I, Hsinchu ...)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
77
ページ:
20-25
発行年:
2012年11月
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)