文献
J-GLOBAL ID:201202241094294198
整理番号:12A0057605
ディープサブミクロンRFCMOSの高周波チャネル熱雑音のための新しい電界依存移動度モデル
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
著者 (10件):
ONG S.n.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
,
ONG S.n.
(TD & Research/DTD/Spice Modeling, RFspice Characterization and Modeling, GLOBALFOUNDRIES Singapore Pte. Ltd., SGP)
,
YEO K.s.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
,
CHEW K.w.j.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
,
CHEW K.w.j.
(TD & Research/DTD/Spice Modeling, RFspice Characterization and Modeling, GLOBALFOUNDRIES Singapore Pte. Ltd., SGP)
,
CHAN L.h.k.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
,
LOO X.s.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
,
LOO X.s.
(TD & Research/DTD/Spice Modeling, RFspice Characterization and Modeling, GLOBALFOUNDRIES Singapore Pte. Ltd., SGP)
,
BOON C.c.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
,
DO M.a.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., SGP)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
68
ページ:
32-37
発行年:
2012年02月
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)