文献
J-GLOBAL ID:201202241153525000
整理番号:12A0722551
金属-強誘電体-絶縁体-半導体キャパシタにおける保持特性に及ぼす基板シリコンのドーピング濃度の効果
Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors
著者 (11件):
XIAO Y. G.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
XIONG Y.
(The School of Mathematics and Computational Sci., Xiangtan Univ., Xiangtan, Hunan 411105, People’s Republic of China)
,
TANG M. H.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
LI J. C.
(ASIC R&D Center, School of Electronic Sci. and Engineering of National Univ. of Defense Technol., Changsha, Hunan ...)
,
CHENG C. P.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
JIANG B.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
TANG Z. H.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
LV X. S.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
CAI H. Q.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
,
GU X. C.
(ASIC R&D Center, School of Electronic Sci. and Engineering of National Univ. of Defense Technol., Changsha, Hunan ...)
,
ZHOU Y. C.
(Key Lab. of Low Dimensional Materials and Application Technol. (Xiangtan University), Ministry of Education ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
17
ページ:
173504-173504-4
発行年:
2012年04月23日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)