文献
J-GLOBAL ID:201202241562898365
整理番号:12A1467071
自立GaN基板上のモノリシックAlInNに基づく青色垂直共振器形面発光レーザダイオード
Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
著者 (5件):
COSENDEY Gatien
(Ecole Polytechnique Federale de Lausanne (EPFL), Inst. of Condensed Matter Physics (ICMP), CH-1015 Lausanne, CHE)
,
CASTIGLIA Antonino
(Ecole Polytechnique Federale de Lausanne (EPFL), Inst. of Condensed Matter Physics (ICMP), CH-1015 Lausanne, CHE)
,
ROSSBACH Georg
(Ecole Polytechnique Federale de Lausanne (EPFL), Inst. of Condensed Matter Physics (ICMP), CH-1015 Lausanne, CHE)
,
CARLIN Jean-francois
(Ecole Polytechnique Federale de Lausanne (EPFL), Inst. of Condensed Matter Physics (ICMP), CH-1015 Lausanne, CHE)
,
GRANDJEAN Nicolas
(Ecole Polytechnique Federale de Lausanne (EPFL), Inst. of Condensed Matter Physics (ICMP), CH-1015 Lausanne, CHE)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
15
ページ:
151113-151113-4
発行年:
2012年10月08日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)