文献
J-GLOBAL ID:201202241917460641
整理番号:12A0859177
GaAsのナノ構造化(311)表面からのテラヘルツパルス放出
Terahertz Pulse Emission from Nanostructured (311) Surfaces of GaAs
著者 (9件):
ADOMAVICIUS R.
(Semiconductor Physics Inst. of Center for Physical Sciences and Technol., A.Gostauto 11, 01108, Vilnius, LTU)
,
ADAMONIS J.
(Semiconductor Physics Inst. of Center for Physical Sciences and Technol., A.Gostauto 11, 01108, Vilnius, LTU)
,
BICIUNAS A.
(Semiconductor Physics Inst. of Center for Physical Sciences and Technol., A.Gostauto 11, 01108, Vilnius, LTU)
,
KROTKUS A.
(Semiconductor Physics Inst. of Center for Physical Sciences and Technol., A.Gostauto 11, 01108, Vilnius, LTU)
,
ATRASHCHENKO A.
(Ioffe Inst., Polytechnicheskaya 26, 194021, St Petersburg, RUS)
,
EVTIKHIEV V.
(Ioffe Inst., Polytechnicheskaya 26, 194021, St Petersburg, RUS)
,
ULIN V.
(Ioffe Inst., Polytechnicheskaya 26, 194021, St Petersburg, RUS)
,
KALITEEVSKI M.
(Durham Univ., Dep. of Physics, DH1 3LE, Durham, GBR)
,
ABRAM R.
(Durham Univ., Dep. of Physics, DH1 3LE, Durham, GBR)
資料名:
Journal of Infrared, Millimeter, and Terahertz Waves
(Journal of Infrared, Millimeter, and Terahertz Waves)
巻:
33
号:
6
ページ:
599-604
発行年:
2012年06月
JST資料番号:
A0436B
ISSN:
1866-6892
資料種別:
逐次刊行物 (A)
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)