文献
J-GLOBAL ID:201202244415163570
整理番号:12A0444020
熱アニーリング中のCuスルーシリコンビア(TSVs)における微細構造生成と欠陥形成
Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing
著者 (11件):
SHIN Hae-A-Seul
(Seoul National Univ., Dep. of Materials Sci. & Engineering, Seoul, KOR)
,
KIM Byoung-Joon
(Seoul National Univ., Dep. of Materials Sci. & Engineering, Seoul, KOR)
,
KIM Ju-Heon
(Korea Inst. of Sci. and Technol., Materials Sci. and Technol. Div., Seoul, KOR)
,
HWANG Sung-Hwan
(Seoul National Univ., Dep. of Materials Sci. & Engineering, Seoul, KOR)
,
BUDIMAN Arief Suriadi
(Los Alamos National Lab., Center for Integrated Nanotechnologies (CINT), Los Alamos, NM, USA)
,
SON Ho-Young
(Hynix Semiconductor Inc., PKG Dev. Group, Res. & Dev. Div., Icheon, KOR)
,
BYUN Kwang-Yoo
(Hynix Semiconductor Inc., PKG Dev. Group, Res. & Dev. Div., Icheon, KOR)
,
TAMURA Nobumichi
(Lawrence Berkeley National Lab., Advanced Light Source (ALS), Berkeley, CA, USA)
,
KUNZ Martin
(Lawrence Berkeley National Lab., Advanced Light Source (ALS), Berkeley, CA, USA)
,
KIM Dong-Ik
(Korea Inst. of Sci. and Technol., Materials Sci. and Technol. Div., Seoul, KOR)
,
JOO Young-Chang
(Seoul National Univ., Dep. of Materials Sci. & Engineering, Seoul, KOR)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
41
号:
4
ページ:
712-719
発行年:
2012年04月
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)