文献
J-GLOBAL ID:201202247598150276
整理番号:12A0405537
1270V,1.21mΩ・cm2SiC埋め込みゲート静電誘導トランジスタ(SiC-BGSIT)
1270V, 1.21mΩ.cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
著者 (6件):
TANAKA Yasunori
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibraki, JPN)
,
YANO Koji
(Yamanashi Univ., Yamanashi, JPN)
,
OKAMOTO Mitsuo
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibraki, JPN)
,
TAKATSUKA Akio
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibraki, JPN)
,
ARAI Kazuo
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibraki, JPN)
,
YATSUO Tsutomu
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibraki, JPN)
資料名:
Materials Science Forum
(Materials Science Forum)
巻:
600/603
号:
Pt.2
ページ:
1071-1074
発行年:
2009年
JST資料番号:
D0716B
ISSN:
0255-5476
資料種別:
逐次刊行物 (A)
発行国:
スイス (CHE)
言語:
英語 (EN)