文献
J-GLOBAL ID:201202249858134191
整理番号:12A0460673
多層構造および傾斜エッジJosephson接合を備えた高Tc電子素子の先端開発動向
Recent Developments of High-Tc Electronic Devices with Multilayer Structures and Ramp-Edge Josephson Junctions
著者 (5件):
ADACHI Seiji
(Superconductivity Res. Laboratory/International Superconductivity Technol. Center)
,
TSUKAMOTO Akira
(Superconductivity Res. Laboratory/International Superconductivity Technol. Center)
,
HATO Tsunehiro
(Superconductivity Res. Laboratory/International Superconductivity Technol. Center)
,
KAWANO Joji
(Superconductivity Res. Laboratory/International Superconductivity Technol. Center)
,
TANABE Keiichi
(Superconductivity Res. Laboratory/International Superconductivity Technol. Center)
資料名:
IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)
(IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers))
巻:
E95-C
号:
3
ページ:
337-346 (J-STAGE)
発行年:
2012年
JST資料番号:
L1370A
ISSN:
0916-8524
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
日本 (JPN)
言語:
英語 (EN)