文献
J-GLOBAL ID:201202250304420999
整理番号:12A1466655
炭素ドープのGe2Sb2Te5から成る相変化物質:高密度相変化メモリ素子への応用が期待される材料
Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
著者 (10件):
ZHOU Xilin
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
WU Liangcai
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
SONG Zhitang
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
RAO Feng
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
ZHU Min
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
PENG Cheng
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
YAO Dongning
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
SONG Sannian
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
LIU Bo
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
,
FENG Songlin
(State Key Lab. of Functional Materials for Informatics and Nanotechnology Lab., Shanghai Inst. of Micro-system and ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
14
ページ:
142104-142104-4
発行年:
2012年10月01日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)