文献
J-GLOBAL ID:201202251036565934
整理番号:12A1371173
ドーピング密度の異なるInAs/GaAs量子ドットのSiデルタドーピング
Si delta doping inside InAs/GaAs quantum dots with different doping densities
著者 (5件):
WANG Ke-fan
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
GU Yongxian
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
YANG Xiaoguang
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
YANG Tao
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
WANG Zhanguo
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
30
号:
4
ページ:
041808-041808-6
発行年:
2012年07月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)