文献
J-GLOBAL ID:201202251531199502
整理番号:12A1053101
分子線エピタクシープロセスにおけるSi(001)表面の低温クリーニングへの水素化の応用:走査トンネル顕微鏡,反射高エネルギー電子回折,高分解能透過電子顕微法による研究
Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflected high-energy electron diffraction, and high resolution transmission electron microscopy
著者 (6件):
ARAPKINA L. V.
(A. M. Prokhorov General Physics Inst. of the Russian Acad. of Sciences, 38 Vavilov Street, Moscow 119991, RUS)
,
KRYLOVA L. A.
(A. M. Prokhorov General Physics Inst. of the Russian Acad. of Sciences, 38 Vavilov Street, Moscow 119991, RUS)
,
CHIZH K. V.
(A. M. Prokhorov General Physics Inst. of the Russian Acad. of Sciences, 38 Vavilov Street, Moscow 119991, RUS)
,
CHAPNIN V. A.
(A. M. Prokhorov General Physics Inst. of the Russian Acad. of Sciences, 38 Vavilov Street, Moscow 119991, RUS)
,
UVAROV O. V.
(A. M. Prokhorov General Physics Inst. of the Russian Acad. of Sciences, 38 Vavilov Street, Moscow 119991, RUS)
,
YURYEV V. A.
(A. M. Prokhorov General Physics Inst. of the Russian Acad. of Sciences, 38 Vavilov Street, Moscow 119991, RUS)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
112
号:
1
ページ:
014311-014311-7
発行年:
2012年07月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)