文献
J-GLOBAL ID:201202252755366630
整理番号:12A1154447
Ag/ZnFe2O4/Ptメモリ素子における二極性及び三状態単極性抵抗スイッチング挙動
Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices
著者 (6件):
HU Wei
(State Key Lab. of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen Univ. ...)
,
CHEN Xinman
(Inst. of Opto-Electronic Materials and Technol., South China Normal Univ., Guangzhou 510631, CHN)
,
WU Guangheng
(State Key Lab. of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen Univ. ...)
,
LIN Yanting
(State Key Lab. of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen Univ. ...)
,
QIN Ni
(State Key Lab. of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen Univ. ...)
,
BAO Dinghua
(State Key Lab. of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen Univ. ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
6
ページ:
063501-063501-4
発行年:
2012年08月06日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)