文献
J-GLOBAL ID:201202257515543374
整理番号:12A1547888
STT-MRAMの界面工学による不揮発性作業メモリの実証
Demonstration of Non-volatile Working Memory through Interface Engineering in STT-MRAM
著者 (7件):
YOSHIDA C.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
,
OCHIAI T.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
,
IBA Y.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
,
YAMAZAKI Y.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
,
TSUNODA K.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
,
TAKAHASHI A.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
,
SUGII T.
(Low-power Electronics Assoc. & Project (LEAP), Ibaraki, JPN)
資料名:
Digest of Technical Papers. Symposium on VLSI Technology
(Digest of Technical Papers. Symposium on VLSI Technology)
巻:
2012
ページ:
59-60
発行年:
2012年
JST資料番号:
A0035B
ISSN:
0743-1562
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)