文献
J-GLOBAL ID:201202257769177106
整理番号:12A1506601
サブ原子層堆積で成長させたInGaN/GaNヘテロ構造
InGaN/GaN heterostructures grown by submonolayer deposition
著者 (13件):
TSATSULNIKOV A. F.
(Russian Acad. of Sciences, Ioffe Physical-Technical Inst., ul. Politekhnicheskaya 26, 194021, St.Petersburg, RUS)
,
TSATSULNIKOV A. F.
(Russian Acad. of Sciences, Submicron Heterostructures for Microelectronics Res. and Engineering Center, ul. ...)
,
LUNDIN W. V.
(Russian Acad. of Sciences, Ioffe Physical-Technical Inst., ul. Politekhnicheskaya 26, 194021, St.Petersburg, RUS)
,
LUNDIN W. V.
(Russian Acad. of Sciences, Submicron Heterostructures for Microelectronics Res. and Engineering Center, ul. ...)
,
ZAVARIN E. E.
(Russian Acad. of Sciences, Ioffe Physical-Technical Inst., ul. Politekhnicheskaya 26, 194021, St.Petersburg, RUS)
,
ZAVARIN E. E.
(Russian Acad. of Sciences, Submicron Heterostructures for Microelectronics Res. and Engineering Center, ul. ...)
,
SAKHAROV A. V.
(Russian Acad. of Sciences, Ioffe Physical-Technical Inst., ul. Politekhnicheskaya 26, 194021, St.Petersburg, RUS)
,
SAKHAROV A. V.
(Russian Acad. of Sciences, Submicron Heterostructures for Microelectronics Res. and Engineering Center, ul. ...)
,
MUSIKHIN Yu. G.
,
USOV S. O.
(Russian Acad. of Sciences, Ioffe Physical-Technical Inst., ul. Politekhnicheskaya 26, 194021, St.Petersburg, RUS)
,
USOV S. O.
(Russian Acad. of Sciences, Submicron Heterostructures for Microelectronics Res. and Engineering Center, ul. ...)
,
MIZEROV M. N.
(Russian Acad. of Sciences, Submicron Heterostructures for Microelectronics Res. and Engineering Center, ul. ...)
,
CHERKASHIN N. A.
(Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Res. (CNRS) ...)
資料名:
Semiconductors
(Semiconductors)
巻:
46
号:
10
ページ:
1335-1340
発行年:
2012年10月
JST資料番号:
T0093A
ISSN:
1063-7826
CODEN:
SMICES
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)