文献
J-GLOBAL ID:201202261914994948
整理番号:12A0555303
クロスオーバー抵抗メモリのセレクタ素子のためのSi-As-Te薄膜における閾値スイッチング
Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
著者 (7件):
HO LEE Jong
(Dep. of Materials Sci. and Engineering and Inter-university Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
HWAN KIM Gun
(Dep. of Materials Sci. and Engineering and Inter-university Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
BAE AHN Young
(Dep. of Materials Sci. and Engineering and Inter-university Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
WOON PARK Ji
(Dep. of Materials Sci. and Engineering and Inter-university Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
WOOK RYU Seung
(Dep. of Electrical Engineering, Stanford Univ., Stanford, California 94305, USA)
,
SEONG HWANG Cheol
(Dep. of Materials Sci. and Engineering and Inter-university Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
JOON KIM Hyeong
(Dep. of Materials Sci. and Engineering and Inter-university Semiconductor Res. Center, Seoul National Univ., Seoul ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
12
ページ:
123505-123505-4
発行年:
2012年03月19日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)