文献
J-GLOBAL ID:201202264009174286
整理番号:12A0652083
3元マグネトロン同時スパッタリングによる半Heusler La-Pt-Bi薄膜の構造および電気特性
Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering
著者 (7件):
MIYAWAKI Tetsuya
(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
,
SUGIMOTO Nozomi
(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
,
FUKATANI Naoto
(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
,
YOSHIHARA Tatsuhiko
(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
,
UEDA Kenji
(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
,
TANAKA Nobuo
(EcoTopia Inst., Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, JPN)
,
ASANO Hidefumi
(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
111
号:
7
ページ:
07E327-07E327-3
発行年:
2012年04月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)