文献
J-GLOBAL ID:201202264614130690
整理番号:12A0895215
エレクトロニクス応用のInAlN/GaN系二重チャネル高電子移動度トランジスタの作製と特性評価
Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications
著者 (9件):
XUE Junshuai
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
ZHANG Jincheng
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
ZHANG Kai
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
ZHAO Yi
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
ZHANG Linxia
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
MA Xiaohua
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
LI Xiaogang
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
MENG Fanna
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
HAO Yue
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
111
号:
11
ページ:
114513-114513-5
発行年:
2012年06月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)