文献
J-GLOBAL ID:201202266926774988
整理番号:12A1602423
n型電子誘起強磁性半導体(In,Fe)Asの成長とキャラクタリゼーション
Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As
著者 (8件):
NAM HAI Pham
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
DUC ANH Le
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
MOHAN Shyam
(Dep. of Applied Physics, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
TAMEGAI Tsuyoshi
(Dep. of Applied Physics, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
KODZUKA Masaya
(Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, Tsukuba 305-0047, JPN)
,
OHKUBO Tadakatsu
(National Inst. for Materials Sci., 1-2-1 Sengen, Tsukuba 305-0047, JPN)
,
HONO Kazuhiro
(Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, Tsukuba 305-0047, JPN)
,
TANAKA Masaaki
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
18
ページ:
182403-182403-5
発行年:
2012年10月29日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)