文献
J-GLOBAL ID:201202268193695418
整理番号:12A0555108
マイグレーション・エンハンスト・エピタクシーによるCu2Se無しCuGaSe2の成長の成功
Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxy
著者 (5件):
FUJITA Miki
(Waseda Univ., Fac. of Sci. and Engineering, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169 - 8555, Japan; CREST, Japan Sci. and ...)
,
SATO Tomohiro
(Waseda Univ., Fac. of Sci. and Engineering, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169 - 8555, Japan; CREST, Japan Sci. and ...)
,
KITADA Tsuyoshi
(Waseda Univ., Fac. of Sci. and Engineering, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169 - 8555, Japan; CREST, Japan Sci. and ...)
,
KAWAHARAZUKA Atsushi
(CREST, Japan Sci. and Technol. Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan; Waseda Univ., Kagami ...)
,
HORIKOSHI Yoshiji
(Waseda Univ., Fac. of Sci. and Engineering, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan; CREST, Japan Sci. and ...)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
30
号:
2
ページ:
02B126-02B126-5
発行年:
2012年03月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)