文献
J-GLOBAL ID:201202269297410969
整理番号:12A0555286
SiO2/Si構造でのHfO2のバンドアライメント
Band alignment of HfO2 on SiO2/Si structure
著者 (10件):
WANG Xiaolei
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
HAN Kai
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
WANG Wenwu
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
XIANG Jinjuan
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
YANG Hong
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
ZHANG Jing
(Microelectronics Dep., North China Univ. of Technol., Beijing 100041, CHN)
,
MA Xueli
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
ZHAO Chao
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
CHEN Dapeng
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
,
YE Tianchun
(Key Lab. of Microelectronics Devices and Integrated Technol., Inst. of Microelectronics, Chinese Acad. of Sciences ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
12
ページ:
122907-122907-4
発行年:
2012年03月19日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)