文献
J-GLOBAL ID:201202271105954884
整理番号:12A1016167
電子ビーム物理蒸着により成長させたGd2O3/Si(111)のミクロ構造,相転移,及び界面化学
Microstructure, phase transition, and interfacial chemistry of Gd2O3/Si(111) grown by electron-beam physical vapor deposition
著者 (5件):
WENG Xiaojun
(Materials Res. Inst. and Electro-Optics Center, The Pennsylvania State Univ., Univ. Park, Pennsylvania 16802)
,
GRAVE Daniel A.
(Dep. of Materials Sci. and Engineering and Applied Res. Lab., The Pennsylvania State Univ., Univ. Park, Pennsylvania ...)
,
HUGHES Zachary R.
(Electro-Optics Center and Dep. of Materials Sci. and Engineering, The Pennsylvania State Univ., Univ. Park ...)
,
WOLFE Douglas E.
(Dep. of Materials Sci. and Engineering and Applied Res. Lab., The Pennsylvania State Univ., Univ. Park, Pennsylvania ...)
,
ROBINSON Joshua A.
(Electro-Optics Center and Dep. of Materials Sci. and Engineering, The Pennsylvania State Univ., Univ. Park ...)
資料名:
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films
(Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films)
巻:
30
号:
4
ページ:
041512-041512-10
発行年:
2012年07月
JST資料番号:
C0789B
ISSN:
0734-2101
CODEN:
JVTAD6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)